Van der Waals heterostructures have nice potential for the rising self-powered photoelectrochemical photodetectors as a result of their excellent photoelectric conversion functionality and environment friendly interfacial provider transportation. By contemplating the band alignment, structural design, and progress optimization, the heterostructures of vertically oriented SnS2 with totally different densities on MoS2 nanosheets are designed and fabricated utilizing a two-step epitaxial progress technique. In contrast with SnS2, MoS2, and low density–vertical SnS2/MoS2 heterostructure, the excessive density–vertical SnS2/MoS2 heterostructure reveals largely enhanced self-powered photodetection performances, equivalent to a large photocurrent density (∼932.8 μA cm−2), a wonderful photoresponsivity (4.66 mA W−1), and an ultrafast response/restoration time (3.6/6.4 ms) within the ultraviolet-visible vary. This spectacular enhancement of excessive density–vertical SnS2/MoS2 photodetectors is especially ascribed to the primarily improved cost switch and provider transport of type-II band alignment heterostructures and the environment friendly gentle absorption from the distinctive light-trapping construction. As well as, the photoelectrocatalytic water splitting efficiency of the excessive density–vertical SnS2/MoS2 heterostructure additionally advantages from the type-II band alignment and the light-trapping construction. This work gives invaluable inspiration for the design of two-dimensional optoelectronic and photoelectrochemical gadgets with improved efficiency by the morphology and heterostructure design.
